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IXRFD630 Datasheet Preview

IXRFD630 Datasheet

30A Low-Side RF MOSFET Driver

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30 A Low-Side RF MOSFET Driver IXRFD630
Features
Description
High Peak Output Current
Low Output Impedance
Low Quiescent Supply Current
Low Propagation Delay
High Capacitive Load Drive Capability
Wide Operating Voltage Range
Applications
RF MOSFET Driver
Class D and E RF Generators
Multi-MHz Switch Mode Supplies
Pulse Transformer Driver
Pulse Laser Diode Driver
Pulse Generator
The IXRFD630 is a CMOS high-
speed, high-current gate driver
specifically designed to drive
MOSFETs in Class D and E HF
RF applications as well as other
applications requiring ultrafast
rise and fall times or short mini-
mum pulse widths. The IXRFD630 can source and
sink 30 A of peak current while producing voltage rise
and fall times of less than 4 ns and minimum pulse
widths of 8 ns. The input of the driver is compatible
with TTL or CMOS and is fully immune to latch up over
the entire operating range. Designed with small inter-
nal delays, cross conduction or current shoot-through
is virtually eliminated. The features and wide safety
margin in operating voltage and power make the
IXRFD630 unmatched in performance and value.
The surface mount IXRFD630 is packaged in a low-
inductance RF package incorporating advanced layout
techniques to minimize stray lead inductances for opti-
mum switching performance.
Fig. 1- Block Diagram and Truth Table
IN OUT
00
11
1




IXYS

IXRFD630 Datasheet Preview

IXRFD630 Datasheet

30A Low-Side RF MOSFET Driver

No Preview Available !

30 A Low-Side RF MOSFET Driver IXRFD630
Absolute Maximum Ratings
Parameter
Value
Supply Voltage VCC
Input Voltage Level VIN
All Other Pins
30V
-5V to VCC + 0.3V
-0.3V to VCC +0.3V
Power Dissipation
TA (AMBIENT) ≤ 25C
TC (CASE) ≤ 25C
Storage Temperature
2W
100W
-40°C to 150°C
Soldering Lead Temperature
(10 seconds maximum)
300°C
Parameter
Value
Maximum Junction Temperature
150° C
Operating Temperature Range
-40° C to 85° C
Thermal Impedance (Junction to Case) RӨJC 0.25° C/W
Note: Operating the device outside of the “Absolute Maximum Rat-
ings” may cause permanent damage. Typical values indicate condi-
tions for which the device is intended to be functional but do not
guarantee specific performance limits. The guaranteed specifica-
tions apply only for the test conditions listed. Exposure to absolute
maximum conditions for extended periods may impact device reli-
ability.
Electrical Characteristics
Unless otherwise noted, TA = 25° C, 8V < VCC < 30V.
All voltage measurements with respect to GND. IXRFD630 configured as described in Test Conditions.
Symbol
VIH
VIL
VHYS
VIN
IIN
VOH
VOL
ROH
ROL
IPEAK
IDC
tR
tF
tONDLY
tOFFDLY
PWmin
VCC
ICC
Parameter
Test Conditions
High input voltage
VCC = 15V for typical value
Low input voltage
Input hysteresis
VCC = 15V for typical value
Input voltage range
Input current
High output voltage
Low output voltage
0VVIN VCC
High output resistance
VCC = 15V IOUT = 100mA
Low output resistance
VCC = 15V IOUT = 100mA
Peak output current
VCC = 15V
Continuous output current
Rise time
Fall time
VCC=15V CL=1nF
CL=2nF
VCC =15V CL=1nF
CL=2nF
ON propagation delay
VCC =15V CL=2nF
OFF propagation delay VCC =15V CL=2nF
Minimum pulse width
Power supply voltage
Power supply current
FWHM VCC =15V CL=1nF
Recommended
VCC = 15V, VIN = 0V
VCC = 15V, VIN = 3.5V
VCC = 15V, VIN = VCC
Min
3.5
-5
-10
VCC - 0.025
8
Typ Max Units
3V
2.8
0.23
0.8
VCC + 0.3
V
V
V
10
0.025
µA
V
V
0.25
0.17
28 A
2.5 A
4 ns
5 ns
4 ns
5.5 ns
24 ns
22 ns
8 ns
15 18 V
0 1 mA
1 3 mA
0 5 mA
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling and
assembling.
2


Part Number IXRFD630
Description 30A Low-Side RF MOSFET Driver
Maker IXYS
Total Page 8 Pages
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