* Latest generation HDMOSTM process
* International standard package
* Guaranteed Short Circuit SOA capability
* Low VCE(sat) - for low on-state conduction losses
* High current handling capability
* MOS Gate turn-on - drive simplicity
* Fast f
IXSH16N60U1 Datasheet (36.42 KB)
IXSH16N60U1
IXYS
36.42 KB
Igbt.
Low VCE(sat) IGBT with Diode Short Circuit SOA Capability Preliminary data IXSH 16N60U1 VCES IC25 VCE(sat)typ = 600V = 16A = 1.8V Symbol Test Cond.
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