Ultra-low On Resistance
Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature
Advantages Easy to mount Space savings High power density.
Full PDF Text Transcription for IXTA200N085T (Reference)
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IXTA200N085T. For precise diagrams, and layout, please refer to the original PDF.
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA 200N085T IXTP 200N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 200 5.0 V A mΩ...
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ncement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 200 5.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C 1.6 mm (0.062 in.
IXTA200N085T Datasheet
