IXTA200N085T7
IXTA200N085T7 is Power MOSFET manufactured by IXYS.
Preliminary Technical Information
TrenchMVTM
Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
85 200 5.0
V A mΩ
Symbol
Test Conditions
Maximum Ratings TO-263 (7-lead) (IXTA..7)
VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Weight
TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Limited, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds
85 V 85 V
± 20 V 1
200 A
120 A
540 A Pin-out:1
- Gate
(TAB)
25 A 1.0 mJ
2, 3
- Source 4
- NC...
