Overview: Preliminary Technical Information TrenchMVTM IXTA200N085T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 =
RDS(on) ≤ 85 200 5.0 V A mΩ Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Weight TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Limited, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds 85 V 85 V ± 20 V 1 200 A 120 A 7 540 A Pin-out:1 - Gate (TAB) 25 A 1.0 mJ 2, 3 - Source 4 - NC (cut) 5,6,7 - Source 3 V/ns TAB (8) - Drain 480
-55 ... +175 175
-55 ...