Datasheet4U Logo Datasheet4U.com

IXTA200N075T7 - Power MOSFET

Key Features

  • W Ultra-low On Resistance °C °C °C Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect °C 175 ° C Operating Temperature °C Advantages g Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150° C RDS(on) VGS = 10 V, ID = 25 A, Note 1 Characteristic Values Min.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXTA200N075T Power MOSFET IXYS
IXTA200N075T N-Channel MOSFET INCHANGE
IXTA200N055T2 Power MOSFET IXYS
IXTA200N055T2 N-Channel MOSFET INCHANGE
IXTA200N055T2-7 Power MOSFET IXYS

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTA200N085T7 Power MOSFET
IXTA220N055T7 Power MOSFET
IXTA220N075T Power MOSFET
IXTA220N075T7 Power MOSFET
IXTA240N055T7 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary Technical Information TrenchMVTM IXTA200N075T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 200 5.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Package Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Maximum Ratings TO-263 (7-lead) (IXTA..7) 75 V 75 V ± 20 200 120 540 25 500 3 V A A A A mJ V/ns 1 7 Pin-out:1 - Gate 2, 3 - Source 4 - NC (cut) 5,6,7 - Source TAB (8) - Drain (TAB) 430 -55 ... +175 175 -55 ...