IXTA200N075T7
IXTA200N075T7 is Power MOSFET manufactured by IXYS.
Preliminary Technical Information
TrenchMVTM
Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
75 200 5.0
V A mΩ
Symbol
VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Weight
Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Package Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds
Maximum Ratings TO-263 (7-lead) (IXTA..7)
75 V 75 V
± 20
200 120 540
25 500
A mJ
V/ns
Pin-out:1
- Gate 2, 3
- Source...
