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IXTA220N04T2-7 - Power MOSFET

Key Features

  • z International standard package z 175°C Operating Temperature z High current handling capability z Avalanche Rated z Low RDS(on) Advantages z Easy to mount z Space savings z High power density.

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Full PDF Text Transcription for IXTA220N04T2-7 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTA220N04T2-7. For precise diagrams, and layout, please refer to the original PDF.

TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA220N04T2-7 VDSS = ID25 = RDS(on) ≤ 40V 220A 3.5mΩ TO-263 (7-lead) Symbol VDSS VDGR VGSM ID25 ILRMS ...

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on) ≤ 40V 220A 3.5mΩ TO-263 (7-lead) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 50A, Notes 1, 2 Maximum Ratings 40 40 V V ± 20 V 220 A 160 A 660 A 110

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