IXTC96N25T Description
2 g G DS Isolated back surface G = Gate S = Source D = Drain.
- Part: IXTC96N25T
- Manufacturer: IXYS (official site)
- Size: 153.02 KB
IXTC96N25T is Power MOSFET manufactured by IXYS .
2 g G DS Isolated back surface G = Gate S = Source D = Drain.