IXTH16P60P, IXTT16P60P Datasheet - IXYS

IXTH16P60P Power MOSFET

Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH16P60P IXTT16P60P RDS(on) VDSS ID25 = = ≤ - 600V - 16A 720mΩ TO-268 (IXTT) G S D (TAB) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings -.

IXTH16P60P Features

* z z z z TO-247 (IXTH) G D D (TAB) S D = Drain TAB = Drain G = Gate S = Source 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque TO-268 TO-247 (TO-247) 300 260 1.13 / 10 5 6 International standard packages Avalanche Rated Rugged PolarPTM process Low package inductance

IXTT16P60P_IXYS.pdf