• Part: IXTH20N65X
  • Description: Power MOSFET
  • Category: MOSFET
  • Manufacturer: IXYS
  • Size: 232.73 KB
Download IXTH20N65X Datasheet PDF
IXYS
IXTH20N65X
Features - International Standard Packages - Low RDS(ON) and QG - Low Package Inductance Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 - ID25, Note 1 Characteristic Values Min. Typ. Max. 650 V 3.0 5.5 V 100 n A 5 A 50 A 210 m Advantages - High Power Density - Easy to Mount - Space Savings Applications - Switch-Mode and Resonant-Mode Power Supplies - DC-DC Converters - PFC Circuits - AC and DC Motor Drives - Robotics and Servo Controls © 2015 IXYS CORPORATION, All Rights Reserved DS100564E(6/15) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 - ID25, Note...