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IXYS

IXTH60N20L2 Datasheet Preview

IXTH60N20L2 Datasheet

Power MOSFET

No Preview Available !

Advance Technical Information
Linear L2TM Power
MOSFET w/ Extended
FBSOA
IXTT60N20L2
IXTQ60N20L2
IXTH60N20L2
VDSS = 200V
ID25 = 60A
RDS(on) 45mΩ
N-Channel Enhancement Mode
Avalanche Rated
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.063in) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247&TO-3P)
TO-268
TO-3P
TO-247
Maximum Ratings
200
V
200
V
± 20
V
± 30
V
60
A
150
A
60
A
2
J
540
W
-55 to +150
°C
+150
°C
-55 to +150
°C
300
°C
260
°C
1.13/10
Nm/lb.in.
4.0
g
5.5
g
6.0
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
200
V
2.5
4.5 V
±100 nA
5 μA
50 μA
45 mΩ
TO-268 (IXTT)
G
S
Tab
TO-3P (IXTQ)
G
D
S
Tab
TO-247(IXTH)
G
D
S
Tab
G = Gate
D = Drain
S = Source Tab = Drain
Features
z Designed for Linear Operation
z International Standard Packages
z Avalanche Rated
z Guaranteed FBSOA at 75°C
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z Solid State Circuit Breakers
z Soft Start Controls
z Linear Amplifiers
z Programmable Loads
z Current Regulators
© 2009 IXYS CORPORATION, All Rights Reserved
DS100203(10/09)




IXYS

IXTH60N20L2 Datasheet Preview

IXTH60N20L2 Datasheet

Power MOSFET

No Preview Available !

Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
(TO-247&TO-3P)
Safe Operating Area Specification
Symbol
Test Conditions
SOA
VDS = 160V, ID = 1.88A, TC = 75°C, tp = 3s
Source-Drain Diode
IXTT60N20L2 IXTQ60N20L2
IXTH60N20L2
Characteristic Values
Min. Typ. Max.
TO-3P (IXTQ) Outline
35
44
53 S
10.5
nF
1080
pF
255
pF
26
ns
23
ns
90
ns
18
ns
255
nC
48
nC
90
nC
0.23 °C/W
0.25
°C/W
Min.
300
Typ.
Max.
W
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
IRM
QRM
IF = 30A, -di/dt = 100A/μs,
VR = 75V, VGS = 0V
Note 1. Pulse test, t 300μs, duty cycle, d 2%.
TO-268 (IXTT) Outline
Characteristic Values
Min. Typ. Max.
60 A
240 A
1.4 V
330
ns
25.0
A
4.13
μC
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
TO-247 (IXTH) Outline
123
P
e
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537


Part Number IXTH60N20L2
Description Power MOSFET
Maker IXYS
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IXTH60N20L2 Datasheet PDF






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