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IXTH64N65X - Power MOSFET

Key Features

  • International Standard Package.
  • Low RDS(ON) and QG.
  • Low Package Inductance Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5.
  • ID25, Note 1 Characteristic Values Min. Typ. Max. 650 V 3.0 5.0 V 100 nA 10 A 100 A 51 m Advantages.
  • High Power Density.
  • Easy to Mount.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information X-Class Power MOSFET N-Channel Enhancement Mode IXTH64N65X VDSS = ID25 = RDS(on) 650V 64A 51m Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 650 650 V V 30 V 40 V 64 A 128 A 890 W -55 ... +150 150 -55 ... +150 300 260 C C C °C °C 1.13/10 Nm/lb.