IXTH76P10T Datasheet | IXYS

TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-268HV TO-247 Maximum Ratings - 100 - 100 15 25 - 76 - 230 - 38 -55 ... +150 C C -55 ... +150 C °C °C 1.13 /10 Nm/lb.in. 2.5...