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IXTH02N450HV - High Voltage Power MOSFET

Download the IXTH02N450HV datasheet PDF. This datasheet also covers the IXTT02N450HV variant, as both devices belong to the same high voltage power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Blocking Voltage.
  • High Voltage Packages Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTT02N450HV-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTH102N15T N-Channel MOSFET INCHANGE
IXTH102N20T N-Channel MOSFET INCHANGE
IXTH10N100 MOSFET IXYS Corporation
IXTH10P50 P-Channel MOSFET IXYS Corporation
IXTH110N10L2 N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTH02N250 High Voltage Power MOSFETs
IXTH03N400 High Voltage Power MOSFETs
IXTH102N15T Power MOSFET
IXTH102N20T Power MOSFET
IXTH10N100D2 Depletion Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
High Voltage Power MOSFET IXTT02N450HV IXTH02N450HV VDSS I D25 RDS(on) = 4500V = 200mA  625 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque TO-268HV TO-247HV Maximum Ratings 4500 V 4500 V 20 V 30 V 200 mA 600 mA 113 W - 55 ... +150 C 150 C - 55 ... +150 C 300 °C 260 °C 1.13/10 Nm/lb.in 4 g 6 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VGS(th) VDS = VGS, ID = 250A IGSS VGS = 20V, VDS = 0V IDSS VDS = 3.6kV, VGS = 0V VDS = 4.5kV VDS = 3.