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IXTK120N65X2 - Power MOSFET

Key Features

  • International Standard Packages.
  • Low QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTK120N65X2 IXTX120N65X2 VDSS = ID25 = RDS(on)  650V 120A 23m TO-264P (IXTK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient 650 V 650 V  30 V  40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C 120 240 15 3.5 1250 50 -55 ... +150 150 -55 ... +150 A A A J W V/ns C C C Maximum Lead Temperature for Soldering 300 °C Plastic Body for 10s 260 °C Mounting Torque (TO-264P) Mounting Force (PLUS247) 1.13/10 20..120 /4.5..27 Nm/lb.