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IXTK170N10P - Power MOSFET

Download the IXTK170N10P datasheet PDF. This datasheet also covers the IXTT170N10P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z International Standard Packages z Fast Intrinsic Rectifier z Avalanche Rated z Low RDS(ON) and QG z Low Package Inductance Advantages z High Power Density z Easy to Mount z Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTT170N10P_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTK170N10P N-Channel MOSFET INCHANGE
IXTK100N25P N-Channel MOSFET IXYS Corporation
IXTK102N30P PolarHT Power MOSFET IXYS Corporation
IXTK102N30P N-Channel MOSFET INCHANGE
IXTK110N20L2 N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTK170P10P Power MOSFET
IXTK17N120L Power MOSFET
IXTK102N65X2 Power MOSFET
IXTK110N20L2 Power MOSFET
IXTK120N20P PolarHT Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTT170N10P IXTQ170N10P IXTK170N10P Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C 1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264 & TO-3P) TO-268 TO-3P TO-264 Maximum Ratings 100 V 100 V ± 20 V ± 30 V 170 A 160 A 350 A 60 A 2 J 10 V/ns 715 W -55 to +175 °C +175 °C -55 to +175 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 4.0 g 5.5 g 10.