IXTK170N10P Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IXTK170N10P ·FEATURES ·Drain Current ID=170A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source O

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTT170N10P IXTQ170N10P IXTK170N10P Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA E

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