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IXTK180N15P - PolarHT Power MOSFET

Features

  • International Standard Package.
  • Avalanche Rated.
  • Low Package Inductance.
  • Fast intrinsic Diode.
  • Dynamic dv/dt Rated.
  • Low RDS(on) and QG Advantages.
  • Easy to mount.
  • Space savings.
  • High power density © 2015 IXYS.

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTK180N15P VDSS = ID25 = RDS(on)  150V 180A 11m Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  175°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque Maximum Ratings 150 V 150 V  20 V  30 V 180 A 75 A 380 A 60 A 4 J 800 W 10 V/ns -55 ... +175 C 175 C -55 ... +175 C 300 C 260 C 1.13/10 Nm/lb.in.
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