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IXTP12N50P - Power MOSFET

Download the IXTP12N50P datasheet PDF. This datasheet also covers the IXTA12N50P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance easy to drive and to protect Advantages z Easy to mount z Space savings z High power density © 2008 IXYS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA12N50P_IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTP12N50P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTP12N50P. For precise diagrams, and layout, please refer to the original PDF.

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA12N50P IXTI12N50P IXTP12N50P VDSS = ID25 = ≤RDS(on) 500V 12A 500mΩ TO-263 (IXTA) Symbol VDSS VDGR VGSS...

View more extracted text
S = ID25 = ≤RDS(on) 500V 12A 500mΩ TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062) from case for 10s Plastic body for 10s Mounting torque Mounting force (TO-220) (TO-263) TO-263 Leaded TO-263 TO-220 Maximum Ratings 500 500 V V ±30 V ±40 V 12 A 30 A 12 A 600 mJ 10 V/ns 200 W -55 ... +150 150 -55 ... +150 300 260 1.13 / 10 10..65 / 2.2..14.6 2.5 2.8 3.0 °C °C °C °C °

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo IXTP12N50P N-Channel MOSFET INCHANGE
INCHANGE Logo IXTP12N50PM N-Channel MOSFET INCHANGE

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