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IXTP12N50P - N-Channel MOSFET

Datasheet Summary

Features

Static drain-source on-resistance: RDS(on) ≤ 0.5Ω@VGS=10V.
Fully characterized avalanche voltage and current.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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IXTP12N50P N-Channel MOSFET by INCHANGE - Datasheet Preview — Datasheet preview – IXTP12N50P

Datasheet Details

Part number	IXTP12N50P
Manufacturer	INCHANGE
File Size	245.97 KB
Description	N-Channel MOSFET
Datasheet	IXTP12N50P Datasheet
Additional preview pages of the IXTP12N50P datasheet.

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isc N-Channel MOSFET Transistor IXTP12N50P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 0.

Published: Nov 16, 2020 |