IXTP12N50P Datasheet | Specifications & PDF Download

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA12N50P IXTI12N50P IXTP12N50P VDSS = ID25 = ≤RDS(on) 500V 12A 500mΩ TO-263 (IXT

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PolarTM Power MOSFET IXTP12N50PM (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VG

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isc N-Channel MOSFET Transistor IXTP12N50PM ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 500mΩ@

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isc N-Channel MOSFET Transistor IXTP12N50P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 0.5Ω@VGS=10V ·Fully characterized avalanche volta

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