IXYS
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IXTP1N100P Datasheet Preview
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IXTP1N100P Datasheet
Power MOSFET
PolarTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTY1N100P
IXTA1N100P
IXTP1N100P
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
Maximum Ratings
1000
V
1000
V
20
V
30
V
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
1.0
1.8
1.0
100
10
50
-55 ... +150
150
-55 ... +150
A
A
A
mJ
V/ns
W
C
C
C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062in.) from Case for 10s
260
°C
Mounting Force (TO-263)
Mounting Torque (TO-220)
10..65 / 2.2..14.6
1.13 / 10
N/lb
Nm/lb.in
TO-252
TO-263
TO-220
0.35
g
2.50
g
3.00
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 50μA
IGSS
VGS = 20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
2.5
4.5 V
50 nA
5 A
100 A
12.2 15.0
VDSS =
ID25 =
RDS(on)
1000V
1A
15
TO-252 (IXTY)
G
S
TO-263 (IXTA)
D (Tab)
G
S
TO-220 (IXTP)
D (Tab)
GDS
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
International Standard Packages
Low QG
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
DC-DC Converters
Switch-Mode and Resonant-Mode
Power Supplies
AC and DC Motor Drives
Lasers
Drivers
Robotics and Servo Controls
© 2017 IXYS CORPORATION, All Rights Reserved
DS99234H(8/17)
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IXYS
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IXTP1N100P Datasheet Preview
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IXTP1N100P Datasheet
Power MOSFET
IXTY1N100P
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 30V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 50 (External)
RthJC
RthCS
TO-220
Characteristic Values
Min. Typ. Max
0.45
0.78
S
331
pF
24
pF
5.5
pF
15.5
nC
4.1
nC
8.0
nC
20
ns
26
ns
55
ns
24
ns
2.5 C/W
0.50
C/W
IXTA1N100P
IXTP1N100P
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
IF = 1A, -di/dt = 100A/μs, VR = 100V
Characteristic Values
Min. Typ. Max
1.0 A
3.0 A
1.5 V
750
ns
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734B2 7,157,338B2
6,710,405B2 6,759,692 7,063,975B2
6,710,463
6,771,478B2 7,071,537
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