900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






IXYS

IXTP1N100P Datasheet Preview

IXTP1N100P Datasheet

Power MOSFET

No Preview Available !

PolarTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTY1N100P
IXTA1N100P
IXTP1N100P
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
Maximum Ratings
1000
V
1000
V
20
V
30
V
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
1.0
1.8
1.0
100
10
50
-55 ... +150
150
-55 ... +150
A
A
A
mJ
V/ns
W
C
C
C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062in.) from Case for 10s
260
°C
Mounting Force (TO-263)
Mounting Torque (TO-220)
10..65 / 2.2..14.6
1.13 / 10
N/lb
Nm/lb.in
TO-252
TO-263
TO-220
0.35
g
2.50
g
3.00
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 50μA
IGSS
VGS = 20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
2.5
4.5 V
50 nA
5 A
100 A
12.2 15.0
VDSS =
ID25 =
RDS(on)
1000V
1A
15
TO-252 (IXTY)
G
S
TO-263 (IXTA)
D (Tab)
G
S
TO-220 (IXTP)
D (Tab)
GDS
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
International Standard Packages
Low QG
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
DC-DC Converters
Switch-Mode and Resonant-Mode
Power Supplies
AC and DC Motor Drives
Lasers
Drivers
Robotics and Servo Controls
© 2017 IXYS CORPORATION, All Rights Reserved
DS99234H(8/17)




IXYS

IXTP1N100P Datasheet Preview

IXTP1N100P Datasheet

Power MOSFET

No Preview Available !

IXTY1N100P
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 30V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 50(External)
RthJC
RthCS
TO-220
Characteristic Values
Min. Typ. Max
0.45
0.78
S
331
pF
24
pF
5.5
pF
15.5
nC
4.1
nC
8.0
nC
20
ns
26
ns
55
ns
24
ns
2.5 C/W
0.50
C/W
IXTA1N100P
IXTP1N100P
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
IF = 1A, -di/dt = 100A/μs, VR = 100V
Characteristic Values
Min. Typ. Max
1.0 A
3.0 A
1.5 V
750
ns
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734B2 7,157,338B2
6,710,405B2 6,759,692 7,063,975B2
6,710,463
6,771,478B2 7,071,537



Part Number IXTP1N100P
Description Power MOSFET
Maker IXYS
Total Page 3 Pages
PDF Download

IXTP1N100P Datasheet PDF





Similar Datasheet

1 IXTP1N100 High Voltage MOSFET
IXYS Corporation
2 IXTP1N100P Power MOSFET
IXYS





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy