IXTP1N100P - TO-220C N-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on) ≤ 15Ω@VGS=10V.
Fully characterized avalanche voltage and current.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IXTP1N100P
Manufacturer	INCHANGE
File Size	260.52 KB
Description	TO-220C N-Channel MOSFET
Datasheet	IXTP1N100P Datasheet
Additional preview pages of the IXTP1N100P datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IXTP1N100P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 15Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Switch-Mode and Resonant-Mode Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 1000 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 1.0 IDM Drain Current-Single Pulsed 1.8 PD Total Dissipation @TC=25℃ 50 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 2.

Published: Nov 16, 2020 |