IXTP1N100P Datasheet and Specifications PDF

The IXTP1N100P is a TO-220C N-Channel MOSFET.

Key Specifications

PackageTO-220-3
Mount TypeThrough Hole
Max Operating Temp150 °C
Min Operating Temp-55 °C
Part NumberIXTP1N100P Datasheet
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor IXTP1N100P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 15Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-.
*Static drain-source on-resistance: RDS(on) ≤ 15Ω@VGS=10V
*Fully characterized avalanche voltage and current
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATION
*DC/DC Converter
*Switch-Mode and Resonant-Mode Power Supplies
*ABSOL.
Part NumberIXTP1N100P Datasheet
DescriptionPower MOSFET
ManufacturerIXYS
Overview PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY1N100P IXTA1N100P IXTP1N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Condition.
* International Standard Packages
* Low QG
* Avalanche Rated
* Low Package Inductance
* Fast Intrinsic Rectifier Advantages
* High Power Density
* Easy to Mount
* Space Savings Applications
* DC-DC Converters
* Switch-Mode and Resonant-Mode Power Supplies
* AC and DC Motor Drives
*  Lasers .
Part NumberIXTP1N100P Datasheet
DescriptionTO-252 N-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 15Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot varia.
*Static drain-source on-resistance: RDS(on) ≤ 15Ω@VGS=10V
*Fully characterized avalanche voltage and current
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATION
*DC/DC Converter
*Switch-Mode and Resonant-Mode Power Supplies
*ABSOL.

Price & Availability

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TME 0 1+ : 3.84 EUR
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