IXTP200N055T2 - Power MOSFET

This page provides the datasheet information for the IXTP200N055T2, a member of the IXTA200N055T2 Power MOSFET family.

Datasheet Summary

Features

z International Standard Packages z 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density.

IXYS

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Datasheet Details

Part number	IXTP200N055T2
Manufacturer	IXYS
File Size	165.95 KB
Description	Power MOSFET
Datasheet	IXTP200N055T2 Datasheet
Additional preview pages of the IXTP200N055T2 datasheet.

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Full PDF Text Transcription

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TrenchT2TM Power MOSFET IXTA200N055T2 IXTP200N055T2 VDSS = ID25 = RDS(on) ≤ 55V 200A 4.2mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.

Published: Feb 13, 2015 |