IXTP200N055T2 Datasheet and Specifications PDF

TrenchT2TM Power MOSFET IXTA200N055T2 IXTP200N055T2 VDSS = ID25 = RDS(on) ≤ 55V 200A 4.2mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM.

z International Standard Packages z 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density Applications z Automotive - Motor Drives - 12V Battery - ABS Systems z DC/DC Converters and Off-Line UP.

isc N-Channel MOSFET Transistor IXTP200N055T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 4.2mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum.

*Static drain-source on-resistance: RDS(on) ≤ 4.2mΩ@VGS=10V
*Fully characterized avalanche voltage and current
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATION
*DC/DC Converters
*High Current Switching Applications
*ABSOLUTE MA.