IXTP200N055T2 Description
+175 °C °C °C 300 260 1.13 / 10 °C °C Nm/lb.in. 2.5 g 3.0 g Characteristic Values Min. 55 V 2.0 4.0 V ±200 nA 5 μA 50 μA 3.3 4.2 mΩ G S TO-220 (TAB) GD S (TAB) G = Gate S = Source D = Drain TAB = Drain.
IXTP200N055T2 is Power MOSFET manufactured by IXYS.
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
IXTP200N055T2 | N-Channel MOSFET |
+175 °C °C °C 300 260 1.13 / 10 °C °C Nm/lb.in. 2.5 g 3.0 g Characteristic Values Min. 55 V 2.0 4.0 V ±200 nA 5 μA 50 μA 3.3 4.2 mΩ G S TO-220 (TAB) GD S (TAB) G = Gate S = Source D = Drain TAB = Drain.