Overview: TrenchT2TM Power MOSFET IXTA200N055T2 IXTP200N055T2 VDSS = ID25 =
RDS(on) ≤ 55V 200A 4.2mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 Symbol
VDSS VDGR
VGSM
ID25 ILRMS IDM
IA EAS
PD
TJ TJM Tstg
TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 Seconds Mounting Torque (TO-220) TO-263 TO-220 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 50A, Notes 1, 2 Maximum Ratings 55 55 V V ± 20 V 200 A 120 A 500 A 100 A 600 mJ 360 W -55 ... +175 175
-55 ... +175 °C °C °C 300 260
1.13 / 10 °C °C Nm/lb.in. 2.5 g 3.0 g Characteristic Values Min. Typ. Max.
55 V
2.0 4.0 V
±200 nA
5 μA 50 μA 3.3 4.
