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IXTP2R4N50P - Power MOSFET

Download the IXTP2R4N50P datasheet PDF. This datasheet also covers the IXTY2R4N50P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International Standard Packages.
  • Low Q G.
  • Avalanche Rated.
  • Low Package Inductance.
  • Fast Intrinsic Rectifier Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTY2R4N50P_IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTP2R4N50P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTP2R4N50P. For precise diagrams, and layout, please refer to the original PDF.

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY2R4N50P IXTP2R4N50P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight...

View more extracted text
VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-220 Maximum Ratings 500 V 500 V 30 V 40 V 2.4 A 4.5 A 2.4 A 100 mJ 10 V/ns 56 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in 0.35 g 3.

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