IXTP2R4N50P - N-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on) ≤ 3.75Ω@VGS=10V.
Fully characterized avalanche voltage and current.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

IXTP2R4N50P N-Channel MOSFET by INCHANGE - Datasheet Preview — Datasheet preview – IXTP2R4N50P

Datasheet Details

Part number	IXTP2R4N50P
Manufacturer	Inchange Semiconductor
File Size	246.16 KB
Description	N-Channel MOSFET
Datasheet	IXTP2R4N50P Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IXTP2R4N50P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 3.75Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 2.4 IDM Drain Current-Single Pulsed 4.

Published: Nov 16, 2020 |