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IXYS

IXTP80N12T2 Datasheet Preview

IXTP80N12T2 Datasheet

Power MOSFET

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TrenchT2TM
Power MOSFETs
IXTA80N12T2
IXTP80N12T2
VDSS = 120V
ID25 = 80A
RDS(on) 17m
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-263AA (IXTA)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25C to 175C
TJ = 25C to 175C, RGS = 1M
Continuous
Transient
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
TC = 25C
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Mounting Torque (TO-220)
TO-263
TO-220
Maximum Ratings
120
V
120
V
20
V
30
V
80
A
200
A
40
A
400
mJ
325
W
-55 ... +175
175
-55 ... +175
 C
 C
 C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
2.5
g
3.0
g
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250A
VGS(th)
VDS = VGS, ID = 100A
IGSS
VGS = 20V, VDS = 0V
IDSS
VDS = VDSS, VGS= 0V
TJ = 150C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2
Characteristic Values
Min. Typ. Max.
120
V
2.5
4.5 V
            200 nA
5 A
175  A
17 m
G
S
D (Tab)
TO-220AB (IXTP)
GDS
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
International Standard Packages
175°C Operating Temperature
Avalanche Rated
Low RDS(on)
Fast Intrinsic Rectifier
High Current Handling Capability
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Synchronous Rectification
DC/DC Converters and Off-Line UPS
Primary- Side Switch
High Current Switching Applications
© 2013 IXYS CORPORATION, All Rights Reserved
DS100240A(8/13)




IXYS

IXTP80N12T2 Datasheet Preview

IXTP80N12T2 Datasheet

Power MOSFET

No Preview Available !

Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10(External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCH
TO-220
Characteristic Values
Min. Typ. Max.
36
60
S
4740
pF
415
pF
66
pF
21
ns
14
ns
39
ns
28
ns
80
nC
23
nC
20
nC
0.50
0.46 C/W
 C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
IF = 0.5 • ID25, VGS = 0V
IRM
-di/dt = 100A/s
QRM
VR = 60V
Characteristic Values
Min. Typ. Max.
80 A
320 A
1.3 V
90
ns
4
A
180
nC
IXTA80N12T2
IXTP80N12T2
TO-263 Outline
Pins:
1 - Gate
2,4 - Drain
3 - Source
TO-220 Outline
Notes: 1. Pulse test, t 300s, duty cycle, d  2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
Pins: 1 - Gate
3 - Source
2 - Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537



Part Number IXTP80N12T2
Description Power MOSFET
Maker IXYS
Total Page 3 Pages
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IXTP80N12T2 Datasheet PDF





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