IXTQ200N06P Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Overview: PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 200N06P V DSS ID25 RDS(on) = 60 = 200 ≤ 6.0 V A mΩ Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS VDGR VGS V GSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD T J TJM Tstg TL T SOLD Md Weight TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient Continuous TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P) TO-3P 60 V 60 V ±30 V ±20 V 200 A 75 A 400 A 60 A 80 mJ 4.0 J 10 V/ns G DS (TAB) G = Gate S = Source D = Drain TAB = Drain 714 W -55 ... +175 °C 175 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 5.

Datasheet Details

Part number	IXTQ200N06P
Manufacturer	IXYS (now Littelfuse)
File Size	140.92 KB
Description	Power MOSFET
Datasheet	IXTQ200N06P-IXYS.pdf

Key Features

l International standard package l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 60 V V GS(th) V DS = V, GS I D = 250µA 2.5 5.0 V IGSS VGS = ±20 VDC, VDS = 0 ±100 nA IDSS VDS = VDSS VGS = 0 V TJ = 150° C 25 µA 250 µA RDS(on) VGS = 10 V, ID = 60A V = 15 V, I = 400A GS D Pulse.

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Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	IXTQ200N06P	N-ChannelMOSFET	INCHANGE

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