| Part Number | IXTQ200N06P Datasheet |
|---|---|
| Manufacturer | IXYS |
| Overview | PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 200N06P V DSS ID25 RDS(on) = 60 = 200 ≤ 6.0 V A mΩ Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS VDGR VGS V GS. l International standard package l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 60 V V GS(th) V . |
IXTQ200N06P Datasheet and Specifications PDF
The IXTQ200N06P is a Power MOSFET.
Key Specifications
| Mount Type | Through Hole |
|---|---|
| Pins | 3 |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IXTQ200N06P Datasheet |
|---|---|
| Description | N-ChannelMOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 6mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot va.
*Drain Source Voltage- : VDSS= 60V(Min) *Static Drain-Source On-Resistance : RDS(on) = 6mΩ(Max) *Fast Switching *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Switch-Mode and Resonant-Mode Power Supplies *DC-DC Converters *A. |