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PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTQ 200N06P
V DSS
ID25
RDS(on)
= 60 = 200 ≤ 6.0
V A mΩ
Symbol
Test Conditions
Maximum Ratings TO-3P (IXTQ)
VDSS VDGR
VGS V
GSM
ID25 ID(RMS) IDM IAR EAR EAS
dv/dt
PD T
J
TJM Tstg
TL T
SOLD
Md
Weight
TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient Continuous TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P) TO-3P
60
V
60
V
±30
V
±20
V
200
A
75
A
400
A
60
A
80
mJ
4.0
J
10
V/ns
G DS
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
714
W
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IXTQ200N06P Datasheet
