l International standard package l Unclamped Inductive Switching (UIS)
rated l Low package inductance
- easy to drive and to protect
Advantages
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
Characteristic Values Min. Typ. Max. 60
V
V GS(th)
V DS
=
V, GS
I
D
=
250µA
2.5
5.0 V
IGSS
VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150° C
25 µA 250 µA
RDS(on)
VGS = 10 V, ID = 60A
V = 15 V, I = 400A
GS
D
Pulse.
Full PDF Text Transcription for IXTQ200N06P (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXTQ200N06P. For precise diagrams, and layout, please refer to the original PDF.
PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 200N06P V DSS ID25 RDS(on) = 60 = 200 ≤ 6.0 V A mΩ Symbol Test Conditions Maximum Ratings TO-3P (IX...
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60 = 200 ≤ 6.0 V A mΩ Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS VDGR VGS V GSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD T J TJM Tstg TL T SOLD Md Weight TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient Continuous TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P) TO-3P 60 V 60 V ±30 V ±20 V 200 A 75 A 400 A 60 A 80 mJ 4.0 J 10 V/ns G DS (TAB) G = Gate S = Source D = Drain TAB = Drain 714
IXTQ200N06P Datasheet
