IXTQ200N06P - Power MOSFET

Product Overview

IXYS

Part number	IXTQ200N06P
Manufacturer	IXYS
File Size	140.92 KB
Description	Power MOSFET
Datasheet	IXTQ200N06P Datasheet
Additional preview pages of the IXTQ200N06P datasheet.

l International standard package l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 60 V V GS(th) V DS = V, GS I D = 250µA 2.5 5.0 V IGSS VGS = ±20 VDC, VDS = 0 ±100 nA IDSS VDS = VDSS VGS = 0 V TJ = 150° C 25 µA 250 µA RDS(on) VGS = 10 V, ID = 60A V = 15 V, I = 400A GS D Pulse.

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Published: Nov 21, 2020 |