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IXTQ22N50P Datasheet PolarHV Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Download the IXTQ22N50P datasheet PDF. This datasheet also includes the IXTV22N50PS variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IXTV22N50PS_IXYS.pdf) that lists specifications for multiple related part numbers.

Overview

Advance Technical Information www.DataSheet4U.com PolarHVTM Power MOSFET N-Channel Enhancement Mode IXTQ 22N50P IXTV 22N50P IXTV 22N50PS VDSS ID25 RDS(on) = 500 V = 22 A = 270 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering for 10s Mounting torque TO-3P PLUS220 & PLUS220SMD TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C 350 -55 ...

+150 150 -55 ...

+150 300 260 W °C °C °C °C °C G D D (TAB) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 500 500 ± 30 22 66 22 30 750 10 V V V A A A mJ mJ V/ns G D S (TAB) PLUS220 (IXFV) S PLUS220SMD (IXFV-PS) Md Weight 1.13/10 Nm/lb.in.

Key Features

  • z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 270 mΩ Advantages z z z Easy to mount Space savings High power density DS99351A(03/05) © 2005 IXYS All rights reserved IXTQ 22N50P IXTV 22N50PS IXTV 22N50P www. DataSheet4U. com TO-3P (IXTQ) Outline Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Ty.