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IXYS

IXTT30N50L Datasheet Preview

IXTT30N50L Datasheet

Power MOSFET

No Preview Available !

Preliminary Technical Information
Power MOSFET with
Extended FBSOA
N-Channel Enhancement Mode
IXTH30N50L
IXTQ30N50L
IXTT30N50L
D
O DD
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.063in) from case for 10s
Plastic body for 10s
Mounting torque (TO-247, TO-3P)
TO-247
TO-3P
TO-268
RGi
G O ww
O
S
Maximum Ratings
500
V
500
V
±20
V
±30
V
30
A
60
A
30
A
50
mJ
1.5
J
400
W
-55 to +150
°C
+150
°C
-55 to +150
°C
300
°C
260
°C
1.13/10
Nm/lb.in.
6.0
g
5.5
g
5.0
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BV
DSS
VGS(th)
V
GS
=
0V,
I
D
=
250μA
VDS = VGS, ID = 250μA
I
GSS
V
GS
=
±30V,
V
DS
=
0V
I
DSS
V =V
DS
DSS
V = 0V
GS
T
J
= 125°C
R
DS(on)
V
GS
=
10V,
I
D
=
0.5
I , Note 1
D25
Characteristic Values
Min.
500
2.5
Typ.
Max.
V
4.5 V
±100 nA
50 μA
300 μA
0.20 Ω
VDSS = 500V
ID25 = 30A
RDS(on) 0.20Ω
TO-247 (IXTH)
TO-3P (IXTQ)
(TAB)
G
D
S
TO-268 (IXTT)
(TAB)
G
S
(TAB)
G = Gate D = Drain
S = Source TAB = Drain
Features
z Designed for linear operation
z International standard packages
z Unclamped Inductive Switching
(UIS) rated.
z Molding epoxies meet UL 94 V-0
flammability classification
z Integrated gate resistor for easy
paralleling
z Guaranteed FBSOA at 75°C
Applications
z Solid state circuit breakers
z Soft start controls
z Linear amplifiers
z Programmable loads
z Current regulators
© 2007 IXYS CORPORATION, All rights reserved
DS99786(10/07)




IXYS

IXTT30N50L Datasheet Preview

IXTT30N50L Datasheet

Power MOSFET

No Preview Available !

Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
RGi
Integrated gate input resistor
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 • ID25
RG = 0Ω (External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
(TO-247, TO-3P)
Safe Operating Area Specification
Symbol
SOA
Test Conditions
VDS = 400V, ID = 0.5A, TC = 75°C, tp = 2s
Min.
9
Typ.
12
10.2
540
127
3.5
35
117
94
40
240
58
135
0.25
Max.
15 S
nF
pF
pF
Ω
ns
ns
ns
ns
nC
nC
nC
0.31 °C/W
°C/W
Min.
200
Typ.
Max.
W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
IS
VGS = 0V
ISM
Repetitive, pulse width limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
t
rr
I
F
=
I,
S
-di/dt
=
100A/μs,
V
R
=
100V
30 A
120 A
1.5 V
500
ns
Note 1: Pulse test, t 300μs; duty cycle, d 2%.
TO-268 (IXTT) Outline
IXTH30N50L IXTQ30N50L
IXTT30N50L
TO-247 (IXTH) Outline
123
P
e
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-3P (IXTQ) Outline
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537



Part Number IXTT30N50L
Description Power MOSFET
Maker IXYS
Total Page 3 Pages
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