IXTU1R4N60P Power MOSFET

IXYS

Description

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU1R4N60P IXTY1R4N60P IXTP1R4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt.

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Datasheet Specifications

Part number: IXTU1R4N60P
Manufacturer: IXYS
File Size: 309.77 KB
Datasheet: IXTU1R4N60P_IXYS.pdf
Description: Power MOSFET

Features

* International Standard Packages
* Low QG
* Avalanche Rated
* Low Package Inductance
* Fast Intrinsic Rectifier Advantages
* High Power Density
* Easy to Mount

Applications

* DC-DC Converters
* Switch-Mode and Resonant-Mode Power Supplies
* AC and DC Motor Drives
*  Discharge Circiuts in Lasers, Spark Igniters, RF Generators
* High Voltage Pulse Power Applications DS99253F(6/17) IXTU1R4N60P Symbol Test Conditions (TJ = 25C, Unle

IXTU1R4N60P Distributors

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IXTU1R4N60P Power MOSFET IXYS

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