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IXTV30N60PS Datasheet PolarHV Power MOSFET

Manufacturer: IXYS (now Littelfuse)

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Overview

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS VDSS = 600 V ID25 = 30 A RDS(on) ≤ 240 m Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque Mounting force (TO-3P, TO-247) (PLUS220) TO-247 TO-3P PLUS220 TO-268 Maximum Ratings 600 V TO-247 (IXTH) 600 V ±30 V ±40 V 30 A G DS 80 A TO-3P (IXTQ) 30 A 50 mJ 1.5 J 10 V/ns G DS 540 W -55 ...

+150 150 -55 ...

+150 °C °C °C 300 ° C 260 ° C 1.13/10 Nm/lb.in.

Key Features

  • l Fast Recovery diode l Unclamped Inductive Switching (UIS) rated l International standard packages l Low package inductance - easy to drive and to protect © 2006 IXYS All rights reserved DS99251E(12/05) Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. VDS = 20 V; ID = 0.5 ID25, pulse test VGS = 0 V, VDS = 25 V,.

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