IXTX200N10L2 Power MOSFET

IXYS

Description

Advance Technical Information Linear L2TM Power MOSFET w/ Extended FBSOA N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated Symbol VDSS VDGR.

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Datasheet Specifications

Part number: IXTX200N10L2
Manufacturer: IXYS
File Size: 152.40 KB
Datasheet: IXTX200N10L2_IXYS.pdf
Description: Power MOSFET

Features

* z z z G D S Tab TC = 25°C (Chip Capability) Lead Current Limit, (RMS) TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C PLUS247(IXTX) G D S Tab G = Gate S = Source D = Drain Tab = Drain Designed for Linear Operation Avalanche Rated Guaranteed FBSOA at 75°C Advantages

Applications

* z z z z z Solid State Circuit Breakers Soft Start Controls Linear Amplifiers Programmable Loads Current Regulators VGS = 10V, ID = 0.5
* ID25, Note 1 11 mΩ © 2010 IXYS CORPORATION, All Rights Reserved DS100239(2/10) Free Datasheet http://www. datasheet4u. com/ IXTK200N10L2 IXTX200N10L2

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IXTX200N10L2 Power MOSFET IXYS

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