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IXTY05N100, IXTU05N100 Power MOSFET

IXTY05N100 Description

High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU05N100 IXTY05N100 VDSS = ID25 =  RDS(on) 1000V 750mA 17 TO-251 (IXTU) .

IXTY05N100 Features

* International Standard Packages
* Fast Switching Times
* Avalanche Rated
* Rds(on) HDMOSTM Process
* Rugged Polysilicon Gate Cell structure
* Extended FBSOA Advantages
* High Power Density

IXTY05N100 Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Flyback Inverters
* DC Choppers © 2017 IXYS CORPORATION, All Rights Reserved DS100102B(9/17) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 20V, ID = 500mA, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f =

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This datasheet PDF includes multiple part numbers: IXTY05N100, IXTU05N100. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXTY05N100, IXTU05N100
Manufacturer
IXYS
File Size
159.48 KB
Datasheet
IXTU05N100-IXYS.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IXTY05N100, IXTU05N100.
Please refer to the document for exact specifications by model.

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