IXTY05N100
Overview
- International Standard Packages
- Fast Switching Times
- Avalanche Rated
- Rds(on) HDMOSTM Process
- Rugged Polysilicon Gate Cell structure
- Extended FBSOA Advantages
- High Power Density
- Space Savings
Related Datasheets
- AP9563GH — Advanced Power Electronics Corp — P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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- A2SHB — HAOHAI — N-Channel MOSFET