* International Standard Packages
* Fast Switching Times
* Avalanche Rated
* Rds(on) HDMOSTM Process
* Rugged Polysilicon Gate Cell structure
* Extended FBSOA Advantages
* High Power Density
* Space Savings Applications
* Switch-Mode and Resonant-Mode Power Suppli
IXTY05N100 Datasheet (159.48 KB)
IXTY05N100
IXYS
159.48 KB
Power mosfet.
High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU05N100 IXTY05N100 VDSS = ID25 = RDS(on) 1000V 750mA 17 TO-251 (IXTU) .
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