IXTY12N06T, IXTU12N06T Datasheet - IXYS

IXTY12N06T Power MOSFET

Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU12N06T IXTY12N06T VDSS = ID25 = RDS(on) ≤ 60V 12A 85mΩ TO-251 (IXTU) Symbol VDSS VDGR VGSM ID25 IDM ILRMS IAR EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, pulse width limited by TJM Package Current Limit, RMS TO-252 TC = 25°C TC = 25°C TC = 25°C Maximum lead temperature for soldering 1.6 mm (0.062 .

IXTY12N06T Features

* z Ultra-low On Resistance z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Advantages z Easy to mount z Space savings z High power density Applications z Automotive - Motor Drives - 42V Power Bus - ABS Systems z DC/DC

IXTU12N06T-IXYS.pdf