IXYS IXTY26P10T
Power MOSFET
MAXIMUM RATINGS
- 100 V - 100 V 15 V 25 V - 26 A - 80 A - 26 A 300 mJ 150 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in 0.35 g 2.50 g 3.00 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250A VGS(th) VDS = VGS, ID = - 250A IGSS VGS = 15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = -10V, ID = 0.5● ID25, Note 1 Characteristic Values Min. Typ. Max. -100 V - 2.5 - 4.5 V 50 nA -10 A - 250 A 90 m VDSS = ID25 = RDS(on) - 100V - 26A 90m TO-252 (IXTY) G S TO-263 (IXTA) D (Tab) G S TO-220 (IXTP) D (Tab) GDS D (Tab) G = Gate D = Drain S = Source Tab = Drain
FEATURES
● International Standard Packages● Avalanche Rated
● Extended FBSOA
● Fast Intrinsic Diode
● Low RDS(ON) and QG Advantages
● Easy to Mount
● Space Savings
● High Power Density
APPLICATIONS
● High-Side Switching● Push Pull Amplifiers
● DC Choppers
● Automatic Test Equipment
● Current Regulators
● Battery Charger...