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IXTY2N80P Datasheet PDF

IXYS IXTY2N80P

Power MOSFET

Part No. IXTY2N80P
Datasheet IXTY2N80P Download
Manufacturer
IXYS
Description Power MOSFET
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IXTY2N80P datasheet page 1 preview

MAXIMUM RATINGS

800 V 800 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 2 4 2 100 5 70 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263 & TO-251) 10..65 / 2.2..14.6 Mounting Torque (TO-220) 1.13 / 10 N/lb Nm/lb.in TO-251 TO-252 TO-263 TO-220 0.40 g 0.35 g 2.50 g 3.00 g Symbol Test Conditions O (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. S TO-252 (IXTY) D (Tab) G S TO-263 (IXTA) D (Tab) G S TO-220 (IXTP) D (Tab) GDS D (Tab) G = Gate D = Drain S = Source Tab = Drain

FEATURES

● International Standard Packages
● Low QG
● Avalanche Rated
● Low Package Inductance
● Fast Intrinsic Rectifier Advantages
● High Power Density
● Easy to Mount
● Space Savings BVDSS VGS = 0V, ID = 250μA 800 V

APPLICATIONS

VGS(th) IGSS IDSS RDS(on) VDS = VGS, ID = 50μA VGS = 30V, VDS = 0V V...
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