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IXXH110N65C4 - Extreme Light Punch Through IGBT

Key Features

  • Optimized for 20-60kHz Switching.
  • Square RBSOA.
  • Avalanche Capability.
  • Short Circuit Capability.
  • International Standard Package Advantages.
  • High Power Density.
  • 175°C Rated.
  • Extremely Rugged.
  • Low Gate Drive Requirement.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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XPTTM 650V IGBT GenX4TM Extreme Light Punch Through IGBT for 20-60 kHz Switching IXXH110N65C4 VCES = 650V IC110 = 110A V CE(sat)  2.35V tfi(typ) = 35ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 10, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 650 V 650 V ±20 V ±30 V 235 A 160 A 110 A 600 A ICM = 220 A  @VCE VCES 10 μs 880 -55 ... +175 175 -55 ...