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IXYH30N120C3 - High-Speed IGBT

Download the IXYH30N120C3 datasheet PDF. This datasheet also covers the IXYP30N120C3 variant, as both devices belong to the same high-speed igbt family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Voltage Package.
  • Optimized for Low Switching Losses.
  • Square RBSOA.
  • Positive Thermal Coefficient of Vce(sat).
  • Avalanche Rated.
  • International Standard Packages Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXYP30N120C3-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
1200V XPTTM GenX3TM IGBTs High-Speed IGBT for 20-50 kHz Switching IXYP30N120C3 IXYH30N120C3 VCES = 1200V IC110 = 30A VCE(sat)  3.3V tfi(typ) = 88ns Symbol VCES VCGR VGES VGEM IC25 IICCM110 IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 110°C = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque TO-220 TO-247 Maximum Ratings 1200 1200 V V ±20 V ±30 V 75 A 30 A 145 A 20 A 400 mJ ICM = 60 VCE VCES 500 A W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C 260 °C 1.13/10 Nm/lb.