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IXYH40N90C3 - IGBT

Key Features

  • z Optimized for Low Switching Losses z Square RBSOA z Positive Thermal Coefficient of Vce(sat) z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 40A, VGE = 15V, Note 1 TJ = 150°C Characteristic Values Min. Typ. Max. 950 V 3.5 5.5 V 25 μA.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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900V XPTTM IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching Preliminary Technical Information IXYH40N90C3 VCES = IC110 = V ≤CE(sat) tfi(typ) = 900V 40A 2.5V 110ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 5Ω Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 900 V 900 V ±20 V ±30 V 105 A 40 A 200 A ICM = 80 ≤@VCE VCES 600 A W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C 260 °C 1.13/10 Nm/lb.in.