Overview: 900V XPTTM IGBT GenX3TM w/ Diode
High-Speed IGBT for 20-50 kHz Switching Preliminary Technical Information IXYH40N90C3D1 VCES = IC110 = V ≤CE(sat) tfi(typ) = 900V 40A
2.5V 110ns Symbol
VCES VCGR
VGES VGEM
IC25 IC110 IF110 ICM
SSOA (RBSOA)
PC
TJ TJM Tstg
TL TSOLD
Md
Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
Continuous Transient TC = 25°C TTCC = 110°C = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s
Mounting Torque Maximum Ratings 900 V 900 V ±20 V ±30 V 90 A 40 A 25 A
180 A ICM = 80
≤@VCE VCES
500 A W -55 ... +150 150
-55 ... +150 °C °C °C 300 °C 260 °C 1.13/10 Nm/lb.in. 6g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 40A, VGE = 15V, Note 1 TJ = 150°C Characteristic Values Min. Typ. Max.
950 V
3.5 5.5 V
25 μA 750 μA
±100 nA
2.2 2.5 V 2.
