IXYJ30N120C3D1 IGBT

IXYS

Description

Advance Technical Information 1200V XPTTM GenX3TM IGBT w/ Diode (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching IXYJ30N120C3D1 .

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Datasheet Specifications

Part number: IXYJ30N120C3D1
Manufacturer: IXYS
File Size: 219.30 KB
Datasheet: IXYJ30N120C3D1-IXYS.pdf
Description: IGBT

Features

* Optimized for Low Switching Losses
* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 2500V~ Electrical Isolation
* Square RBSOA
* Positive Thermal Coefficient of Vce(sat)
* Anti-Parallel Ultra Fast Diode
* Avalanche Rated Advantages

Applications

* High Frequency Power Inverters
* UPS
* Motor Drives
* SMPS
* PFC Circuits
* Battery Chargers
* Welding Machines
* Lamp Ballasts © 2013 IXYS CORPORATION, All Rights Reserved DS100559(9/13) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 30

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IXYJ30N120C3D1 IGBT IXYS

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