* Optimized for Low Switching Losses
* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 2500V~ Electrical Isolation
* Square RBSOA
* Positive Thermal Coefficient of Vce(sat)
* Anti-Parallel Ultra Fast Diode
* Avalanche Rated Advantages
IXYJ30N120C3D1 Datasheet (219.30 KB)
IXYJ30N120C3D1
IXYS
219.30 KB
Igbt.
Advance Technical Information 1200V XPTTM GenX3TM IGBT w/ Diode (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching IXYJ30N120C3D1 .
📁 Related Datasheet
IXYJ20N120C3D1 IGBT (IXYS)
IXYA12N250CHV High Voltage IGBT (IXYS)
IXYA15N65C3D1 IGBT (IXYS)
IXYA20N120A4HV IGBT (IXYS)
IXYA20N120B4HV IGBT (IXYS)
IXYA20N120C3HV 1200V XPT GenX3 IGBTs (IXYS Corporation)
IXYA20N120C4HV IGBT (IXYS)
IXYA20N65B3 IGBT (IXYS)
IXYA20N65C3 IGBT (IXYS)
IXYA20N65C3D1 IGBT (IXYS)
