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IXYK100N120B3 - IGBT

Key Features

  • z Optimized for 5-30kHZ Switching z Square RBSOA z Positive Thermal Coefficient of Vce(sat) z Avalanche Rated z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information 1200V XPTTM IGBTs GenX3TM IXYK100N120B3 IXYX100N120B3 Extreme Light Punch Through IGBT for 5-30 kHz Switching VCES = IC110 = V ≤CE(sat) tfi(typ) = 1200V 100A 2.6V 240ns TO-264 (IXYK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient 1200 1200 ±20 ±30 V V V V TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load TC = 25°C 225 160 100 530 50 1.2 ICM = 200 ≤@VCE VCES 1150 -55 ... +175 175 -55 ... +175 A A A A A J A W °C °C °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.