• Part: IXYK110N120A4
  • Description: Ultra Low-Vsat PT IGBT
  • Manufacturer: IXYS
  • Size: 1.43 MB
Download IXYK110N120A4 Datasheet PDF
IXYS
IXYK110N120A4
IXYK110N120A4 is Ultra Low-Vsat PT IGBT manufactured by IXYS.
1200V XPTTM IGBT Gen X4TM Ultra Low-Vsat PT IGBT for up to 5k Hz Switching VCES = 1200V IC110 = 110A V  1.80V CE(sat) tfi(typ) = 300ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC= 25°C (Chip Capability) Terminal Current Limit TC= 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 2 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s Mounting Torque Maximum Ratings ±20 ±30 ICM = 220 - VCES -55 ... +175 °C °C -55 ... +175 °C °C 1.13/10 10 Nm/lb.in g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 3m A, VCE =...