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IXYK110N120C4 Datasheet IGBT

Manufacturer: IXYS (now Littelfuse)

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Overview

1200V XPTTM Gen 4 IGBT High Speed IGBT for up to 20-50kHz Switching IXYK110N120C4 VCES = 1200V I = 110A C110 V  2.40V CE(sat) tfi(typ) = 37ns Symbol V CES V CGR VGES V GEM IC25 I LRMS I C110 ICM SSOA (RBSOA) PC T J TJM Tstg TL TSOLD FC Weight Test Conditions T = 25°C to 175°C J T J = 25°C to 175°C, R GE = 1M Continuous Transient TC= 25°C (Chip Capability) Terminal Current Limit T = 110°C C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s Mounting Force Maximum Ratings 1200 V 1200 V ±20 V ±30 V 310 A 160 A 110 A 740 A ICM = 220 A 0.8 • V V CES 1360 W -55 ...

+175 °C 175 °C -55 ...

+175 °C 300 °C 260 °C 1.13 / 10 Nm/lb.in 10 g Symbol Test Conditions (T J = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V V GE(th) I = 3mA, V = V C CE GE I V = V , V = 0V CES CE CES GE T J = 150C IGES VCE = 0V, VGE = 20V V CE(sat) I = I , V = 15V, Note 1 C C110 GE T J = 150C Characteristic Values Min.

Key Features

  • Optimized for Low Switching Losses.
  • Positive Thermal Coefficient of Vce(sat).
  • International Standard Package Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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