* z Optimized for 5-30kHZ Switching z Square RBSOA z 2500V~ Isolation Voltage z Anti-Parallel Ultra Fast Diode z Positive Thermal Coefficient of Vce(sat) z Avalanche Rated z High Current Handling Capability z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement A
IXYN100N120B3H1 Datasheet (180.76 KB)
IXYN100N120B3H1
IXYS
180.76 KB
Igbt.
Preliminary Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode IXYN100N120B3H1 Extreme Light Punch Through IGBT for 5-30 kHz Switching E VCE.
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